DAJE
Well-known member
I've bought some SMD trannies from AE recently, and decided to solder a few to adaptor boards and run them through my Peak Atlas DCA75.
4 x 2222
3 x J201
3 x 5457
Important note:
I don't know what these numbers mean. I had some $ to blow and I overestimated my ability to learn about numbers, so I bought a DCA75. Realistically, anything beyond basic primary/grade school maths is beyond my ken. I am not dumb, I'm just not smart in this particular area. So don't ask me to explain anything here: I do not know. I have copy/pasted the test notes from the DCA75 Windows software, perhaps reading them will answer any questions you have.
The test results are copy/pasted from the DCA software too, so there are no typos.
2222 A
NPN Silicon BJT
Red-C Green-E Blue-B
hFE=303 at Ic=5.11mA
Vbe=0.753V at Ib=5.00mA
VceSat=0.317V at Ic=5.0mA and Ib=0.90mA
IcLeak=0.000mA
2222 B
NPN Silicon BJT
Red-C Green-E Blue-B
hFE=271 at Ic=5.02mA
Vbe=0.752V at Ib=5.00mA
VceSat=0.018V at Ic=5.0mA and Ib=1.00mA
IcLeak=0.000mA
2222 C
NPN Silicon BJT
Red-C Green-E Blue-B
hFE=273 at Ic=5.00mA
Vbe=0.755V at Ib=5.00mA
VceSat=0.018V at Ic=5.0mA and Ib=1.00mA
IcLeak=0.000mA
2222 D
NPN Silicon BJT
Red-E Green-C Blue-B
hFE=173 at Ic=13.27mA
Vbe=0.751V at Ib=5.00mA
VceSat=0.016V at Ic=5.0mA and Ib=1.00mA
IcLeak=0.000mA
Current gain (hFE) can be measured between 4 and 32000.
Gain accuracy for gain lower than 2000 is typically ±3% ±5hFE.
Gain is determined by measuring the step change in base current required to obtain a step change of collector current of 5.0mA±0.25mA. This ensures that leakage current does not influence the gain figure.
Saturation Voltage VceSat is measured, with a collector current of 5mA and a base current of 1mA, if the hFE is greater than 10.
Base-emitter voltage drop is measured at a different base current to that used for the gain measurement.
Base-emitter voltage accuracy is typically ±1% ±0.006V at a current of typically 5.0mA ±1.0mA.
If the base-emitter voltage is less than 0.55V, then it is likely that the transistor is a germanium type.
Leakage current of germanium types can vary hugely with small temperature variations. Even the cooling after handling (or the warming during handling) can influence the leakage current very significantly. That is normal.
Gain of silicon and germanium types is influenced by temperature, particularly for higher gain devices.
Gain will vary considerably over different collector currents.
4 x 2222
3 x J201
3 x 5457
Important note:
I don't know what these numbers mean. I had some $ to blow and I overestimated my ability to learn about numbers, so I bought a DCA75. Realistically, anything beyond basic primary/grade school maths is beyond my ken. I am not dumb, I'm just not smart in this particular area. So don't ask me to explain anything here: I do not know. I have copy/pasted the test notes from the DCA75 Windows software, perhaps reading them will answer any questions you have.
The test results are copy/pasted from the DCA software too, so there are no typos.
2222 A
NPN Silicon BJT
Red-C Green-E Blue-B
hFE=303 at Ic=5.11mA
Vbe=0.753V at Ib=5.00mA
VceSat=0.317V at Ic=5.0mA and Ib=0.90mA
IcLeak=0.000mA
2222 B
NPN Silicon BJT
Red-C Green-E Blue-B
hFE=271 at Ic=5.02mA
Vbe=0.752V at Ib=5.00mA
VceSat=0.018V at Ic=5.0mA and Ib=1.00mA
IcLeak=0.000mA
2222 C
NPN Silicon BJT
Red-C Green-E Blue-B
hFE=273 at Ic=5.00mA
Vbe=0.755V at Ib=5.00mA
VceSat=0.018V at Ic=5.0mA and Ib=1.00mA
IcLeak=0.000mA
2222 D
NPN Silicon BJT
Red-E Green-C Blue-B
hFE=173 at Ic=13.27mA
Vbe=0.751V at Ib=5.00mA
VceSat=0.016V at Ic=5.0mA and Ib=1.00mA
IcLeak=0.000mA
Current gain (hFE) can be measured between 4 and 32000.
Gain accuracy for gain lower than 2000 is typically ±3% ±5hFE.
Gain is determined by measuring the step change in base current required to obtain a step change of collector current of 5.0mA±0.25mA. This ensures that leakage current does not influence the gain figure.
Saturation Voltage VceSat is measured, with a collector current of 5mA and a base current of 1mA, if the hFE is greater than 10.
Base-emitter voltage drop is measured at a different base current to that used for the gain measurement.
Base-emitter voltage accuracy is typically ±1% ±0.006V at a current of typically 5.0mA ±1.0mA.
If the base-emitter voltage is less than 0.55V, then it is likely that the transistor is a germanium type.
Leakage current of germanium types can vary hugely with small temperature variations. Even the cooling after handling (or the warming during handling) can influence the leakage current very significantly. That is normal.
Gain of silicon and germanium types is influenced by temperature, particularly for higher gain devices.
Gain will vary considerably over different collector currents.