Chuck D. Bones
Circuit Wizard
Transistors can be used as diodes, so that's one way to obtain low leakage GE diodes. All of the D2x and D9x diodes I've measured are quite leaky. They can be used in a Klon or Distortion+ and that's about it.
It has to do with the geometry of the transistor. The C-B junction must be able to sustain a much larger Vr than the E-B junction. The C-B junction must also have lower capacitance than the E-B junction in order to maximize switching speed and bandwidth. These requirements cause the C-B junction to be thicker than the E-B junction and that leads to a larger Vf.Question: Why do scenarios 1 & 3 have a slightly higher Vf versus the other two situations?
Im assuming if they were PNPs the same can be said about the Vf but in scenarios 2 & 4?
Do you mind explaining how? Via Q2 clipping?It's already asymmetrical.